Low-Power DRAM Technology For Ultra-Low Leakage

The latest DRAM technology developed by Kioxia and Nanya promises significant low-power memory for AI and IoT.

A low-power memory technology has been innovated by Kioxia Corporation, Japan in collaboration with Nanya Technology, Taiwan. Known as OCTRAM (oxide-semiconductor channel transistor DRAM), this innovative 4F² DRAM uses oxide-semiconductor transistors for ultra-low leakage and high efficiency. This technology aims to significantly reduce power consumption across applications such as artificial intelligence (AI), post-5G communication systems, and Internet of Things (IoT) devices.

OCTRAM features a cylindrical-shaped InGaZnO vertical transistor as its cell transistor, a shift from traditional silicon-based designs. This configuration enhances memory density, establishing the 4F² DRAM as a superior alternative to conventional 6F² DRAM structures. Industries dealing with high computational workloads, such as AI developers, IoT solution providers, and telecommunications networks, are poised to benefit from the energy efficiency and compact design offered by this technology.

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The transistor’s performance is noteworthy, achieving a high ‘on’ current exceeding 15μA per cell and an ‘off’ current as low as 1aA per cell. According to the developers, this remarkable optimisation in device and processing reduces energy leakage to almost negligible levels, setting a new benchmark for efficiency.

What sets the OCTRAM structure apart is its unique “capacitor-first process.” The InGaZnO vertical transistor is mounted atop a high-aspect-ratio capacitor, separating the interactions of the capacitor process from the transistor’s performance. This approach facilitates enhanced device stability and ensures seamless integration without compromising functionality.

The collaboration between both organisations has pioneered for advancing memory solutions, with potential impacts spanning industries reliant on energy-efficient data processing. The ultra-low leakage properties of the InGaZnO transistor promise to reshape how low-power memory technologies cater to evolving demands in computing and connectivity. This innovative technology underscores the potential of oxide-semiconductor materials in driving next-generation DRAM solutions, positioning OCTRAM as a milestone in energy-efficient, high-performance memory design.