SiC Schottky Diodes For High-Frequency Applications

With features like a low forward voltage drop, minimal capacitive charge, and high-temperature operation, these diodes are ideal for power conversion in AC/DC PFC, photovoltaic systems, and more. 

Vishay Intertechnology has introduced 16 new silicon carbide (SiC) Schottky diodes in 650 V and 1200 V versions, designed for high-speed and efficient operation in high-frequency applications. These diodes are packaged in the industry-standard SOT-227 package, offering an efficient solution for various demanding power conversion tasks.

The new series includes dual diode components with current ratings from 40 A to 240 A, in parallel configurations, and single-phase bridge devices rated at 50 A and 90 A. These diodes are built using thin wafer technology, which results in a low forward voltage drop as low as 1.36 V, reducing conduction losses and improving overall system efficiency. The diodes also feature better reverse recovery performance compared to traditional silicon-based diodes, with minimal recovery tails.

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The key features include:

• Low forward voltage drop: 1.36 V
• Low capacitive charge (QC): as low as 56 nC
• High-temperature operation: up to +175°C

The components are suited for high-frequency applications such as AC/DC power factor correction (PFC), DC/DC rectification, and use in photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. The diodes’ low capacitive charge (QC) supports high-speed switching, making them a suitable choice for ultrafast power conversion in these applications.

These diodes also support high-temperature operation and feature a positive temperature coefficient, simplifying parallel connection configurations. The devices are UL-approved (file E78996) and designed with a large creepage distance between terminals, which helps enhance safety and facilitate rapid assembly.

Samples and production quantities are available with lead times of 18 weeks. The new SiC Schottky diodes provide a versatile solution for engineers seeking to improve efficiency in high-frequency power applications.