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Power systems are shrinking, but can they stay efficient? Discover new MOSFETs with cooling technology that tackle heat, cost, and space challenges in AI, EVs, and more.

The electronics industry is moving towards smaller and more powerful systems. Infineon Technologies AG has expanded its 650 V CoolSiCTM MOSFET portfolio with two new product families in Q-DPAK and TOLL packages to support this shift.
These products can be used by PCB designers optimizing layouts, power supply manufacturers developing high- and medium-power SMPS, AI server developers needing efficient power solutions, and renewable energy system integrators working on solar and wind applications. They also benefit EV charger manufacturers, e-mobility developers, and robotics engineers designing humanoid and industrial robots. Additionally, consumer electronics manufacturers, industrial automation companies, and those working with motor drives and solid-state circuit breakers can leverage these components for improved efficiency, compact design, and better thermal performance.

The products, featuring top- and bottom-side cooling, are based on CoolSiCTM Generation 2 (G2) technology, offering improved performance, reliability, and ease of use. They are designed for high- and medium-power switched-mode power supplies (SMPS) used in AI servers, renewable energy systems, EV chargers, e-mobility, humanoid robots, televisions, drives, and solid-state circuit breakers.
The TOLL package provides strong Thermal Cycling on Board (TCoB) capability, reducing PCB footprint and lowering system-level manufacturing costs. It supports various applications, helping PCB designers cut costs and meet market demands.
The Q-DPAK package complements Infineon’s growing Topside Cooled (TSC) product family, which includes CoolMOSTM 8, CoolSiCTM, CoolGaNTM, and OptiMOSTM. The TSC family enhances robustness, maximizes power density, and improves system efficiency at a lower cost. It also enables 95% direct heat dissipation, allowing better space management and minimizing parasitic effects.