Improved 1.2 kV SiC MOSFETs Boost Efficiency

The 1.2 kV SiC MOSFETs improve efficiency, performance, and make it easier to upgrade systems without redesigning, boosting power and reducing resistance.

NoMIS Power has announced a major improvement in its 1.2 kV planar SiC MOSFET platform. By refining device design and process steps, it has significantly reduced on-resistance, making it easier to integrate SiC into existing systems and improve new power converter designs.

In under eight months, NoMIS Power has made a substantial performance jump in its 1.2 kV planar SiC MOSFETs, achieving a specific on-resistance (Ron,sp) of 2.5 mΩ-cm² at room temperature with a 50 nm gate oxide thickness. The combination of low Ron,sp and a thicker gate oxide allows the next-generation devices to support higher-frequency switching, lower input capacitance, and better reliability due to reduced electric field stress on the gate oxide.

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These new SiC MOSFETs offer up to a 20% reduction in Ron,sp compared to the previous generation, while maintaining the same process baseline. This directly boosts performance, enabling system designers to improve efficiency and power density without changing the existing layout.

Additionally, NoMIS Power’s breakthrough allows engineers to operate gate drivers at either +18 V or +20 V gate-to-source voltage (Vgs) with nearly identical performance. This eliminates the need for gate driver redesign, making integration into existing power electronics easier and speeding up the transition to SiC.

This new generation of SiC MOSFETs competes with the best in the market, delivering top-tier performance and reliability while making system upgrades simpler.

Some of the key features in SiC MOSFETs:

• Lower on-resistance for better efficiency.
• Works at higher frequencies with less input capacitance.
• Thicker gate oxide for better reliability.
• 20% better performance than previous version.
• Compatible with existing systems without redesigning drivers.
• Easy integration into old power electronics.

“These new planar SiC MOSFETs push us further ahead of the curve,” said Dr. Seung Yup Jang, VP Head of SiC Device Development at NoMIS Power. “We’re not just improving benchmarks—we’re removing barriers to SiC adoption by giving system designers more flexibility, better performance, and greater confidence.”