Power Electronics Transform Energy And Mobility Sectors

Revolutionary advances in semiconductor technology promise faster EV charging, more efficient energy conversion, and a major leap forward in high- and low-voltage power systems—paving the way for a smarter, greener future.

The Fraunhofer Institute for Applied Solid State Physics IAF is set to showcase advancements in power electronics using gallium nitride (GaN) technology—breakthroughs that promise to accelerate the energy transition and bolster Europe’s economic resilience.

Central to their presentation is a highly integrated monolithic bidirectional switch (MBDS) capable of handling 1200 V, offering a compact and efficient solution for grid-connected power converters and electric vehicle systems. Developed under the GaN4EmoBiL project, this innovation integrates free-wheeling diodes and leverages Fraunhofer’s proprietary GaN-on-insulator technology, using substrates like silicon carbide and sapphire to improve insulation and breakdown voltage. This architecture reduces conduction losses and saves chip space by enabling bidirectional current flow through a single split depletion region.

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“The added value of innovative power electronics is clear: better performance, improved efficiency, and higher power density,” said Achim Lösch, Business Developer for High Frequency and Power Electronics at Fraunhofer IAF. “These improvements translate directly into faster-charging electric vehicles and more efficient renewable energy systems.”

With current EVs typically using 400 V systems and 800 V gaining popularity, Fraunhofer’s 1200 V GaN MBDS paves the way for next-gen electric vehicles and heavy-duty electric trucks with faster charging and reduced energy loss. Dr. Michael Basler will present the full details of this development on May 8 at the PCIM conference in his talk, “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch.”

Fraunhofer IAF is also breaking new ground in the low-voltage domain. Researchers have successfully implemented a single-gate GaN HEMT as a bidirectional switch in a 3-level T-type converter for voltages up to 48 V. This approach simplifies control compared to dual-gate solutions while maintaining efficiency and compactness. Daniel Grieshaber will present this work on May 6, in his session titled “Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology.”