SiC MOSFET Six-Pack Modules

Engineered for demanding applications like EV charging, energy storage, motor drives, and renewable platforms, these modules deliver low switching losses, high power density, and simplified system integration.

SemiQ Inc., has introduced its latest line of 1200 V SiC MOSFET Six-Pack Modules, designed to help engineers build more compact, energy-efficient, and cost-optimized high-voltage systems. These new modules integrate rugged, high-speed switching SiC MOSFETs built on planar technology, featuring robust gate oxide and a reliable body diode for enhanced durability. Housed in a three-phase bridge configuration, the design also includes split DC negative terminals, press-fit terminal connections, and a Kelvin source for accurate voltage referencing — all engineered to simplify system integration and improve operational stability.

Tested to withstand over 1350 V with 100% wafer-level burn-in (WLBI), the modules deliver the performance and reliability essential for a wide range of high-demand applications. These include EV fast charging stations, AC/DC converters, energy storage systems, motor drives, power factor correction (PFC) boost converters, induction heating systems, UPS units, and renewable energy platforms.

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The key features are:

• Supports continuous drain current up to 30 A
• Handles pulsed drain current up to 70 A
• Compact module size: 62.8 x 33.8 x 15 mm

The modules deliver fast and efficient switching performance, featuring turn-on energies ranging from 0.1 to 0.54 mJ and turn-off energies between 0.02 and 0.11 mJ. Switching times are equally impressive, falling within a range of 56 to 105 nanoseconds, enabling high-speed operation and improved system efficiency.

The product family is launching with three key variants: GCMX020A120B2T1P (20mΩ) – Power dissipation: 263 W,GCMX040A120B2T1P (40mΩ) – Power dissipation: 160 W and GCMX080A120B2T1P (80mΩ) – Power dissipation: 103 .

SiC modules combine high power density with low switching losses and optimized thermal performance, offering engineers greater design flexibility and improved efficiency. The modules are rated for operation at junction temperatures up to 175°C and feature straightforward heatsink mounting to simplify assembly.