Smaller, Faster Power Chips

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The bi-directional GaN ICs and gate drivers make single-stage power systems possible, cutting down size, cost, and energy use in EVs, solar, and motors.

Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion.
Bi-Directional GaNFast plus new IsoFast drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion.

Navitas Semiconductor, a company working in gallium nitride (GaN) and silicon carbide (SiC) power technologies, has released the first production-ready 650 V bi-directional GaNFast ICs along with isolated gate drivers. This development supports single-stage bi-directional systems (BDS), allowing a shift from two-stage power converter designs. These ICs are intended for use in electric vehicle (EV) charging (onboard and roadside), solar inverters, energy storage systems, and motor drives.

Over 70% of high-voltage power converters use a two-stage approach, such as EV onboard chargers that include a power-factor-correction (PFC) stage and a DC-DC stage. This setup includes components like DC-link capacitors, which add size, energy loss, and cost. The bi-directional GaNFast ICs combine both stages into one and remove the need for these components.

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An EV and solar inverter manufacturer has started using these single-stage converters, reporting up to 10% cost reduction, 20% energy savings, and 50% reduction in size.

The release also includes a different type of switch. Earlier systems used two separate switches for bi-directional operation. Navitas’ bi-directional GaNFast IC combines these into one chip with a merged drain structure, two gate controls, and an integrated active substrate clamp. One IC replaces up to four older components, reducing part count, board area, and system cost.

The first 650 V bi-directional GaNFast ICs are the NV6427 (RSS(ON) of 100 mΩ) and the NV6428 (50 mΩ), both in top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packages. Navitas plans to add versions with lower on-resistance.

The IsoFast gate drivers provide control of bi-directional GaN devices. These drivers have galvanic isolation, can handle rates up to 200 V/ns, and do not need an external negative bias supply.

“These ICs are a truly game-changing and disruptive technology both at the semiconductor and at the system level. They not only deliver improved efficiency, power density, simplicity, and system costs but will also transform multiple multi-billion-dollar markets in the most sustainable way possible.” Gene Sheridan, CEO and co-founder of Navitas commented.

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